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Q62702-C2128 - Siemens Semiconductor Group

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Q62702-C2128 NPN Silicon AF Transistor (For general AF application High collector current High current gain)

NPN Silicon AF Transistor q q q q q BCP 68 For general AF application High collector current High current gain Low collector-emitter saturation voltage Complementary type: BCP 69 (PNP) Type BCP 68 BCP 68-10 BCP 68-16 BCP 68-25 Marking BCP 68 BCP 68-10 BCP 68-16 BCP 68-25 Ordering Code (tape and reel) Q62702-C2126 Q62702-C2127 Q62702-C2128 Q62702-C2129 .

Features

1.5 mm/6 cm2 Cu. Semiconductor Group 1 01.97 BCP 68 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 30 mA, IB = 0 Collector-emitter breakdown voltage IC = 10 µA, VBE = 0 Collector-base breakdown voltage IC = 10 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IB = 0 Collector-base cutoff current VCB = 25 V VCB = 25 V, TA = 150 ˚C Emitter-base cutoff current VEB = 5 V, IC = 0 DC current gain1) IC = 5 mA, VCE = 10 V IC = 500 mA, VCE = 1 V V(BR)CE0 V(BR)CES V(BR)CB0 V(BR)EB0 ICB0
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