Q62702-A712 - Siemens Semiconductor Group

Q62702-A712 Silicon Switching Diode Array (Electrically insulated high-voltage medium-speed diodes)

Silicon Switching Diode Array q BAW 101 Electrically insulated high-voltage medium-speed diodes Type BAW 101 Marking JPs Ordering Code (tape and reel) Q62702-A712 Pin Configuration Package1) SOT-143 Maximum Ratings Parameter Reverse voltage Peak reverse voltage Forward current Peak forward current Surge forward current, t = 1 µs Total power dissipati.

Features

V, TA = 150 ˚C AC characteristics Diode capacitance VR = 0, f = 1 MHz Reverse recovery time IF = 10 mA, IR = 10 mA, RL = 100 Ω measured at IR = 1 mA Test circuit for reverse recovery time CD trr
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  – 6 1
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  – pF µs Values typ. max. Unit V(BR) VF IR 300
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  – 1.3 V
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  – 150 50 nA µA Pulse generator: tp = 100 ns, D = 0.05 tr = 0.6 ns, Rj = 50 Ω Oscillograph: R = 50 Ω tr = 0.35 ns C ≤ 1 pF Semiconductor Group 2 BAW 101 Forward current IF = f (TA
*; TS)
* Package mounted on epoxy Forward current IF = f (VF) TA = 25 ˚C Reverse current IR = f (TA) Semiconductor Group 3 .