PT9701 - Advanced Semiconductor

PT9701 NPN SILICON RF POWER TRANSISTOR

The ASI PT9701 is a Common Emitter Device Designed for Class A , AB and C Amplifier Applications in the 225 - 400 MHz Military Communications Band. PACKAGE STYLE .280 4L STUD FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting • High Gain MAXIMUM RATINGS IC VCES PDISS TJ TSTG θJC 1.25 A 45 V 14 W @ TC = 25 °C -55 °C to +200 °C -55 °C to +200 °C 12.

Features

INCLUDE:
• Gold Metalization
• Emitter Ballasting
• High Gain MAXIMUM RATINGS IC VCES PDISS TJ TSTG θJC 1.25 A 45 V 14 W @ TC = 25 °C -55 °C to +200 °C -55 °C to +200 °C 12 °C/W 1 = COLLECTOR 2 = BASE 3 & 4 = EMITTER CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO hFE Cob PG ηC IC = 20 mA IC = 10 mA IE = 1.0 mA VCE = 5.0 V VCB = 28 V VCE = 28 V TC = 25 °C TEST CONDITIONS MINIMUM TYPICAL MAXIMUM 25 45 3.5 UNITS V V V --- IC = 200 mA f = 1.0 MHz Pout = 5.0 W f = 400 MHz 15 7.0 10 50 12 55 pF dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE
• NORTH HOLLYWOOD, CA 91605
•.