PT236T30E2 - Prisemi

PT236T30E2 Transistor

Feature This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant.  Very low collector to emitter saturation voltage  DC current gain >100  3A continuous collector current  PNP epitaxial planar silicon transistor PT236T30E2 Transistor 16 25 34 Mechanical Characteristics  Lead finish:100% matte Sn(Tin)  Mounting position: Any  Qualified max re.

Features

Transistor PT236T30E2 Absolute maximum rating@25℃ Parameter DC Current Gain Symbol hFE Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter Saturation Voltage Collector Cut-off Current (IE=0) Emitter Cut-off Current(IC=0) VBE(sat) ICBO IEBO Conditions IC=-2.5A,VCE=-3.0V IC=-0.5A,VCE=-1.0V IC=-0.5A,IB=-5mA IC=-1.2A,IB=-20mA IC=-2A,IB=-20mA IC=-0.5A,IB=-5mA IC=-1.2A,IB=-20mA IC=-2A,IB=-20mA VCB=-30V VCB=-30V TC=125°C VEB=-5V Min. 100 100 - Typ. Max. -0.15 -0.25 -0.5 -1.1 -1.1 -1.2 -0.1 -20 -0.1 Units V V μA μA Typical Characteristics hFE 100 10 0.01 0.1 VCE=-1V 1 Fig1.DC.