PSMN8R9-100BSE - nexperia

PSMN8R9-100BSE N-channel MOSFET

SuperSOA N-channel enhancement mode MOSFET in a D2PAK package qualified to 175 °C. PSMN8R9-100BSE delivers low RDSon and very strong linear-mode (SOA) performance, and complements the latest "hot-swap" controllers - robust enough to withstand substantial inrush currents during turn on, low RDSon to minimize I2R losses and deliver optimum efficiency when turn.

Features

• Avalanche rated, 100% tested
• Low RDSon for low I2R conduction losses
• D2PAK package 3. Applications
• Hot swap
• Load switch
• Soft start
• E-fuse
• Telecommunication systems based on a 48 V backplane/supply rail 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage ID drain current IDM peak drain current Ptot total power dissipation Static characteristics RDSon drain-source on-state resistance Dynamic characteristics QGD gate-drain charge QG(tot) total gate charge Avalanche ruggedness EDS(AL)S non-repetitive drainsource av.