Dual, standard level N-channel MOSFET in an LFPAK56D package (halfbridge configuration), using NextpowerS3 technology. An internal connection is made between the source (S1) of the high-side G1 FET to the drain (D2) of the low-side FET, making the device ideal to use as a half-bridge switch in high-performance PWM and space constrained motor drive appli.
• LFPAK56D package with half-bridge configuration enables:
• Reduced PCB layout complexity
• Module shrinkage through reduced component count
• Improved system level Rth(j-amb) due to optimized package design
• Lower parasitic inductance to support higher efficiency
• Footprint compatibility with LFPAK56D Dual package
• NextpowerS3 technology
• Low power losses, high power density
• Superior avalanche performance
• Repetitive avalanche rated
• LFPAK copper clip packaging provides high robustness and reliability
• Gull wing leads support high manufacturability and Automated Optical Inspection (.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PSMN4R2-30MLD |
NXP |
N-channel MOSFET | |
2 | PSMN4R2-30MLD |
nexperia |
N-channel MOSFET | |
3 | PSMN4R2-60PL |
NXP Semiconductors |
MOSFET | |
4 | PSMN4R2-60PL |
nexperia |
N-channel MOSFET | |
5 | PSMN4R2-80YSE |
nexperia |
N-channel MOSFET | |
6 | PSMN4R0-25YLC |
NXP Semiconductors |
N-channel MOSFET | |
7 | PSMN4R0-25YLC |
nexperia |
N-channel MOSFET | |
8 | PSMN4R0-30YL |
nexperia |
N-channel MOSFET | |
9 | PSMN4R0-30YL |
NXP Semiconductors |
N-Channel MOSFET | |
10 | PSMN4R0-30YLD |
NXP |
N-channel MOSFET | |
11 | PSMN4R0-30YLD |
nexperia |
N-channel MOSFET | |
12 | PSMN4R0-40YS |
NXP |
N-channel MOSFET |