N-channel enhancement mode ASFET for hotswap with enhanced SOA in LFPAK56 package optimized for low RDSon and strong safe operating area, optimized for hot-swap, inrush and linearmode applications. 2. Features and benefits • Fully optimized Safe Operating Area (SOA) for superior linear mode operation • Optimized for low RDSon / low I2R conduction losses • L.
• Fully optimized Safe Operating Area (SOA) for superior linear mode operation
• Optimized for low RDSon / low I2R conduction losses
• LFPAK56 package for applications that demand the highest performance and reliability in a
30 mm2 footprint
• Low leakage <1 µA at 25 °C
• Copper-clip for low parasitic inductance and resistance
• High reliability LFPAK package, qualified to 175 °C
3. Applications
• Hot swap in 12 V - 20 V applications
• e-Fuse
• DC switch
• Load switch
• Battery protection
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS
drain-source voltage
ID.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PSMN2R1-40PL |
NXP Semiconductors |
MOSFET | |
2 | PSMN2R1-40PL |
nexperia |
N-channel MOSFET | |
3 | PSMN2R0-100SSF |
nexperia |
N-channel MOSFET | |
4 | PSMN2R0-25MLD |
nexperia |
N-channel MOSFET | |
5 | PSMN2R0-25YLD |
nexperia |
N-channel MOSFET | |
6 | PSMN2R0-30BL |
NXP Semiconductors |
MOSFET | |
7 | PSMN2R0-30BL |
nexperia |
N-channel MOSFET | |
8 | PSMN2R0-30PL |
NXP Semiconductors |
N-channel MOSFET | |
9 | PSMN2R0-30PL |
nexperia |
N-channel MOSFET | |
10 | PSMN2R0-30YL |
NXP Semiconductors |
N-channel FET | |
11 | PSMN2R0-30YL |
nexperia |
N-channel MOSFET | |
12 | PSMN2R0-30YLD |
nexperia |
N-channel MOSFET |