PSMN2R0-55YLH - nexperia

PSMN2R0-55YLH N-channel MOSFET

200 Amp continuous current, logic level gate drive, N-channel enhancement mode MOSFET in LFPAK56E package. Part of the ASFETs for Battery Isolation and DC Motor control family and using Nexperia’s unique “SchottkyPlus” technology delivers high efficiency and low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like .

Features

• 200 A continuous current capability
• Optimised for 36 V (nominal) battery powered applications
• LFPAK56E low-stress exposed lead-frame for ultimate reliability, optimum soldering and easy solder-joint inspection
• Copper-clip and solder die attach for low package inductance and resistance, and high ID (max) rating
• Qualified to 175 °C
• Avalanche rated, 100% tested
• Low QG, QGD and QOSS for high efficiency, especially at higher switching frequencies
• Superfast switching with soft body-diode recovery for low-spiking and ringing, recommended for low EMI designs
• Unique “SchottkyPlus” tec.