330 Amp continuous current, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK88 package. Part of the ASFETs for Battery Isolation and DC Motor control family and using Nexperia’s unique “SchottkyPlus” technology delivers high efficiency and low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-.
• 330 Amp continuous current capability
• LFPAK88 (8 x 8 mm) LFPAK-style low-stress exposed lead-frame for ultimate reliability,
optimum soldering and easy solder-joint inspection
• Copper-clip and solder die attach for low package inductance and resistance, and high ID(max)
rating
• Ideal replacement for D2PAK and 10 x 12 mm leadless package types
• Qualified to 175 °C
• Avalanche rated, 100 % tested
• Low QG, QGD and QOSS for high efficiency, especially at higher switching frequencies
• Superfast switching with soft body-diode recovery for low-spiking and ringing, recommended for
low EMI des.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PSMN1R2-25YL |
NXP |
N-channel 25 V 1.2 MOhm Logic Level MOSFET | |
2 | PSMN1R2-25YL |
nexperia |
N-channel MOSFET | |
3 | PSMN1R2-25YLC |
NXP |
N-channel 25V 1.3m ohm logic level MOSFET | |
4 | PSMN1R2-25YLC |
nexperia |
N-channel MOSFET | |
5 | PSMN1R2-25YLD |
nexperia |
N-channel MOSFET | |
6 | PSMN1R2-30YLC |
NXP Semiconductors |
MOSFET | |
7 | PSMN1R2-30YLC |
nexperia |
N-channel MOSFET | |
8 | PSMN1R2-30YLD |
NXP |
N-channel MOSFET | |
9 | PSMN1R2-30YLD |
nexperia |
N-channel MOSFET | |
10 | PSMN1R0-100ASE |
nexperia |
N-channel MOSFET | |
11 | PSMN1R0-25YLD |
nexperia |
N-channel MOSFET | |
12 | PSMN1R0-30YLC |
NXP Semiconductors |
N-channel MOSFET |