PSMN1R0-30YLE - nexperia

PSMN1R0-30YLE N-channel MOSFET

N-channel enhancement mode ASFET for hotswap with enhanced SOA in LFPAK56 package optimized for low RDSon and strong safe operating area, optimized for hot-swap, inrush and linearmode applications. 2. Features and benefits • Fully optimized Safe Operating Area (SOA) for superior linear mode operation • Optimized for low RDSon / low I2R conduction losses • L.

Features

• Fully optimized Safe Operating Area (SOA) for superior linear mode operation
• Optimized for low RDSon / low I2R conduction losses
• LFPAK56 package for applications that demand the highest performance and reliability in a 30 mm2 footprint
• Low leakage <1 µA at 25 °C
• Copper-clip for low parasitic inductance and resistance
• High reliability LFPAK package, qualified to 175 °C 3. Applications
• Hot swap in 12 V - 20 V applications
• e-Fuse
• DC switch
• Load switch
• Battery protection 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage ID.