New standards and proprietary approaches are enabling Power-over-Ethernet (PoE) systems capable of delivering up to 90 W to each powered device (PD). Such solutions place increased demands on the power sourcing equipment (PSE) in terms of “soft-start”, thermal management and power density requirements. These ASFETs combine enhanced SOA in a compact 2 mm x 2 .
• Enhanced safe operating area (SOA) for superior linear mode operation
• Low RDSon for low I2R conduction losses
• 2 mm x 2 mm space-saving DFN2020 package, 60% smaller than LFPAK33
• Very low IDSS leakage
3. Applications
• High power PoE applications (60 W and higher)
• IEEE802.3at and proprietary PoE solutions
• Fault tolerant load switch - Inrush management and eFuse applications
• Battery management applications
• Relay replacement
• WIFI hotspots
• 5G picocells
• CCTV
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS
drain-source voltage
ID
drain current
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PSMN040-100MSE |
NXP |
MOSFET | |
2 | PSMN040-100MSE |
nexperia |
N-channel MOSFET | |
3 | PSMN040-200W |
Philips |
N-channel TrenchMOS transistor | |
4 | PSMN041-80YL |
NXP |
MOSFET | |
5 | PSMN041-80YL |
nexperia |
N-channel MOSFET | |
6 | PSMN045-80YS |
NXP Semiconductors |
MOSFET | |
7 | PSMN045-80YS |
nexperia |
N-channel MOSFET | |
8 | PSMN002-25B |
NXP Semiconductors |
N-Channel MOSFET | |
9 | PSMN002-25P |
NXP Semiconductors |
N-Channel MOSFET | |
10 | PSMN003-25W |
Philips |
N-channel logic level TrenchMOS transistor | |
11 | PSMN003-30B |
NXP Semiconductors |
N-Channel MOSFET | |
12 | PSMN003-30P |
NXP Semiconductors |
N-Channel MOSFET |