Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High reliability Power SO8 package, qualified to 175°C Low parasitic inductance and resistance Optimised for 4.5V Gate drive utilising NextPower .
High reliability Power SO8 package, qualified to 175°C
Low parasitic inductance and resistance
Optimised for 4.5V Gate drive utilising NextPower Superjunction technology
Ultra low QG, QGD, & QOSS for high system efficiencies at low and high loads
1.3 Applications
DC-to-DC converters
Load switching
Synchronous buck regulator
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage ID drain current Ptot total power dissipation Tj junction temperature Static characteristics
RDSon
drain-source on-state resistance
Dynamic characterist.
Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PSMN013-30LL |
NXP Semiconductors |
MOSFET | |
2 | PSMN013-30MLC |
nexperia |
N-channel MOSFET | |
3 | PSMN013-30MLC |
NXP Semiconductors |
MOSFET | |
4 | PSMN013-100BS |
nexperia |
N-channel MOSFET | |
5 | PSMN013-100BS |
NXP Semiconductors |
MOSFET | |
6 | PSMN013-100ES |
nexperia |
N-channel MOSFET | |
7 | PSMN013-100ES |
NXP |
N-channel 100V 13.9mOhm Standard Level MOSFET | |
8 | PSMN013-100PS |
nexperia |
N-channel MOSFET | |
9 | PSMN013-100PS |
NXP |
N-channel 100V 13.9mOhm Standard Level MOSFET | |
10 | PSMN013-100XS |
NXP Semiconductors |
MOSFET | |
11 | PSMN013-100YSE |
nexperia |
N-channel MOSFET | |
12 | PSMN013-100YSE |
NXP Semiconductors |
MOSFET |