Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package, using application specific (ASFET) repetitive avalanche silicon technology. 2. Features and benefits • High reliability LFPAK56D package, copper-clip, solder die attach and qualified to 175 °C • Tested to 1 Bn avalanche events • LFPAK copper clip package technology • Copper-clip, sol.
• High reliability LFPAK56D package, copper-clip, solder die attach and qualified to 175 °C
• Tested to 1 Bn avalanche events
• LFPAK copper clip package technology
• Copper-clip, solder die attach
• High robustness and reliability
3. Applications
• Brushless DC and Brushed DC motor control
• DC-to-DC converters
• High-performance synchronous rectification
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
VDS
drain-source voltage 25 °C ≤ Tj ≤ 175 °C
-
ID
drain current
VGS = 5 V; Tmb = 25 °C; Fig. 2
-
Ptot
total power dissipation Tmb = 25 °C; .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PSMN012-60YS |
nexperia |
N-channel MOSFET | |
2 | PSMN012-60YS |
NXP Semiconductors |
N-Channel MOSFET | |
3 | PSMN012-100YL |
nexperia |
N-channel MOSFET | |
4 | PSMN012-100YS |
nexperia |
N-channel MOSFET | |
5 | PSMN012-100YS |
NXP Semiconductors |
Standard Level MOSFET | |
6 | PSMN012-25YLC |
NXP Semiconductors |
MOSFET | |
7 | PSMN012-80BS |
nexperia |
N-channel MOSFET | |
8 | PSMN012-80PS |
nexperia |
N-channel MOSFET | |
9 | PSMN012-80PS |
NXP Semiconductors |
MOSFET | |
10 | PSMN010-25YLC |
NXP Semiconductors |
MOSFET | |
11 | PSMN010-30MLD |
NXP |
N-channel MOSFET | |
12 | PSMN010-55D |
Philips |
N-channel logic level TrenchMOS transistor |