PSC1065H-Q - nexperia

PSC1065H-Q 10A SiC Schottky diode

Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin R2P (TO-252-2) Surface-Mounted Device (SMD) power plastic package offers temperature independent capacitive turn-off, zero recovery switching behavior co.

Features

• Reduced system costs
• Temperature independent fast and smooth switching performance
• Outstanding figure-of-merit (Qc x VF)
• High IFSM capability
• High power density
• System miniaturization
• Reduced EMI
• Qualified according to AEC-Q101 and recommended for use in automotive applications 3. Applications
• Traction inverter
• DC-DC converter
• Onboard charger 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDC DC blocking voltage IF forward current QC total capacitive charge Conditions Tc ≤ 122 °C; δ = 1 VR = 400 V; dIF/dt = 200 A/µs; IF = 10 A; Tj = 25 .