These N-Channel enhancement mode power field effect transistors are using advanced super junction technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency sw.
Improved dv/dt capability
Fast switching
100% EAS Guaranteed
Green Device Available
ID 3A
TO220F Pin Configuration S
GD
Applications
High efficient switched mode power supplies
TV Power
Adapter/charger
Server Power
PV Inverter / UPS
Absolute Maximum Ratings Tc=25℃ unless otherwise noted
Symbol VDS VGS
ID
IDM EAS IAS
PD
TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current
– Continuous (TC=25℃) Drain Current
– Continuous (TC=100℃) Drain Current
– Pul.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PMF02N65M |
Potens semiconductor |
N-Channel MOSFETs | |
2 | PMF04N100T |
Potens semiconductor |
N-Channel MOSFETs | |
3 | PMF04N65M |
Potens semiconductor |
N-Channel MOSFETs | |
4 | PMF05N50M |
Potens semiconductor |
N-Channel MOSFETs | |
5 | PMF08N60M |
Potens semiconductor |
N-Channel MOSFETs | |
6 | PMF08N65M |
Potens semiconductor |
N-Channel MOSFETs | |
7 | PMF08N70M |
Potens semiconductor |
N-Channel MOSFETs | |
8 | PMF08N80T |
Potens semiconductor |
N-Channel MOSFETs | |
9 | PMF09N50M |
Potens semiconductor |
N-Channel MOSFETs | |
10 | PMF09N60M |
Potens semiconductor |
N-Channel MOSFETs | |
11 | PMF09N65M |
Potens semiconductor |
N-Channel MOSFETs | |
12 | PMF100A |
SunMate |
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR DIODE |