Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection encapsulated in small SOD123 Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Forward current: IF ≤ 1 A • Reverse voltage: VR ≤ 40 V • Low forward voltage typ. VF = 540 mV • Low reverse current typ. IR =.
• Forward current: IF ≤ 1 A
• Reverse voltage: VR ≤ 40 V
• Low forward voltage typ. VF = 540 mV
• Low reverse current typ. IR = 30 µA
• Small SMD plastic package
• AEC-Q101 qualified
3. Applications
• Low voltage rectification
• High efficiency DC-to-DC conversion
• Switch mode power supply
• Reverse polarity protection
• Low power consumption applications
• Automotive applications
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
IF forward current
VR reverse voltage
VF forward voltage
IR reverse current
Conditions
Tsp ≤ 55 °C
Tj = 25 °C
IF = 1 A; tp ≤ 300 µs; δ.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PMEG4010EGW-Q |
nexperia |
Schottky barrier rectifier | |
2 | PMEG4010EH |
NXP Semiconductors |
1A very low VF MEGA Schottky barrier rectifiers | |
3 | PMEG4010EH |
nexperia |
MEGA Schottky barrier rectifiers | |
4 | PMEG4010EJ |
NXP Semiconductors |
1A very low VF MEGA Schottky barrier rectifiers | |
5 | PMEG4010EJ |
nexperia |
MEGA Schottky barrier rectifiers | |
6 | PMEG4010EP |
NXP Semiconductors |
1 A low VF MEGA Schottky barrier rectifier | |
7 | PMEG4010EP |
nexperia |
1A low VF MEGA Schottky barrier rectifier | |
8 | PMEG4010EPK |
NXP Semiconductors |
40V 1A low VF MEGA Schottky barrier rectifier | |
9 | PMEG4010EPK |
nexperia |
1A low VF MEGA Schottky barrier rectifier | |
10 | PMEG4010ER |
NXP Semiconductors |
1 A low VF MEGA Schottky barrier rectifier | |
11 | PMEG4010ER |
nexperia |
1A low VF MEGA Schottky barrier rectifier | |
12 | PMEG4010ESB |
NXP |
low VF MEGA Schottky barrier rectifier |