Planar Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a small SOD123 Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Forward current: IF ≤ 1 A • Reverse voltage: VR ≤ 40 V • Low forward voltage typ. VF = 490 mV • Low reverse current typ. IR = 6 µA • Small SMD plastic package 3. Appli.
• Forward current: IF ≤ 1 A
• Reverse voltage: VR ≤ 40 V
• Low forward voltage typ. VF = 490 mV
• Low reverse current typ. IR = 6 µA
• Small SMD plastic package
3. Applications
• Low voltage rectification
• High efficiency DC-to-DC conversion
• Switch mode power supply
• Reverse polarity protection
• Low power consumption applications
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
IF(AV)
average forward current
VR
reverse voltage
VF
forward voltage
IR
reverse current
Conditions δ = 0.5; f = 20 kHz; Tsp ≤ 135 °C
Tj = 25 °C IF = 1 A; tp ≤ 300 µs; δ ≤ 0.02; T.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PMEG4010CEA |
nexperia |
MEGA Schottky barrier rectifier | |
2 | PMEG4010CEH |
NXP Semiconductors |
1A very low VF MEGA Schottky barrier rectifiers | |
3 | PMEG4010CEH |
nexperia |
MEGA Schottky barrier rectifiers | |
4 | PMEG4010CEJ |
NXP Semiconductors |
1A very low VF MEGA Schottky barrier rectifiers | |
5 | PMEG4010CEJ |
nexperia |
MEGA Schottky barrier rectifiers | |
6 | PMEG4010CPA |
nexperia |
MEGA Schottky barrier rectifier | |
7 | PMEG4010CPAS |
NXP |
1A low VF dual MEGA Schottky barrier rectifier | |
8 | PMEG4010AESB |
NXP |
low VF MEGA Schottky barrier rectifier | |
9 | PMEG4010AESB |
nexperia |
MEGA Schottky barrier rectifier | |
10 | PMEG4010BEA |
NXP Semiconductors |
1A very low VF MEGA Schottky barrier rectifier | |
11 | PMEG4010BEA |
nexperia |
1A very low VF Schottky barrier rectifier | |
12 | PMEG4010BEV |
NXP Semiconductors |
1A very low VF MEGA Schottky barrier rectifier |