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The CENTRAL SEMICONDUCTOR PMD18K, PMD19K series types are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for power switching applications. These devices are designed to be electrical/mechanical equivalents to Lambda part numbers. MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS: (TC=25°C) Collec.
MBOL TEST CONDITIONS MIN ICER VCE=54V, RBE=2.2kΩ (PMD18K, 19K80) ICER VCE=67V, RBE=2.2kΩ (PMD18K, 19K100) IEBO VEB=5.0V BVCER IC=100mA, RBE=2.2kΩ (PMD18K, 19K80) 80 BVCER IC=100mA, RBE=2.2kΩ (PMD18K, 19K100) 100 BVCEO IC=100mA (PMD18K, 19K80) 80 BVCEO IC=100mA (PMD18K, 19K100) 100 VCE(SAT) IC=15A, IB=60mA VBE(SAT) IC=15A, IB=60mA VBE(ON) VCE=3.0V, IC=15A hFE VCE=3.0V, IC=15A (PMD18K series) 1.0K hFE VCE=3.0V, IC=15A (PMD19K series) 800 hfe VCE=3.0V, IC=9.0A, f=1.0kHz 300 fT VCE=3.0V, IC=9.0A, f=1.0MHz 4.0 Cob VCB=10V, IE=0, f=1.0MHz MAX 10 10 3.0 2.0 2.8 2.8 20K 20K 60.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | PMD19K100 |
Central Semiconductor Corp |
SILICON POWER DARINGTON TRANSISTORS |
|
| 2 | PMD19K60 |
Central Semiconductor Corp |
SILICON POWER DARINGTON TRANSISTORS |
|
| 3 | PMD19K80 |
Central Semiconductor Corp |
SILICON POWER DARINGTON TRANSISTORS |
|
| 4 | PMD10K |
Central Semiconductor Corp |
SILICON POWER DARLING TRANSISTORSl |
|
| 5 | PMD10K100 |
Central Semiconductor Corp |
SILICON POWER DARLING TRANSISTORSl |
|
| 6 | PMD10K60 |
Central Semiconductor Corp |
SILICON POWER DARLING TRANSISTORSl |
|
| 7 | PMD10K80 |
Central Semiconductor Corp |
SILICON POWER DARLING TRANSISTORSl |
|
| 8 | PMD11K |
Central Semiconductor Corp |
SILICON POWER DARLING TRANSISTORSl |
|
| 9 | PMD11K100 |
Central Semiconductor Corp |
SILICON POWER DARLING TRANSISTORSl |
|
| 10 | PMD11K60 |
Central Semiconductor Corp |
SILICON POWER DARLING TRANSISTORSl |
|
| 11 | PMD11K80 |
Central Semiconductor Corp |
SILICON POWER DARLING TRANSISTORSl |
|
| 12 | PMD1601K |
Inchange Semiconductor |
Silicon NPN Darlingtion Power Transistor |
|