PNP high-voltage transistor in a SOT23 plastic package. NPN complement: PMBTA42. handbook, halfpage PMBTA92 PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 3 1 MARKING TYPE NUMBER PMBTA92 Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) Top view 2 1 2 MAM256 ∗2D Fig.1 Simplified outline (SOT23) and symbol. LIMITING V.
• Low current (max. 100 mA)
• High voltage (max. 300 V). APPLICATIONS
• Telephony
• Professional communication equipment. DESCRIPTION PNP high-voltage transistor in a SOT23 plastic package. NPN complement: PMBTA42.
handbook, halfpage
PMBTA92
PINNING PIN 1 2 3 base emitter collector DESCRIPTION
3 3 1
MARKING TYPE NUMBER PMBTA92 Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1)
Top view
2 1 2
MAM256
∗2D
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Pt.
PNP high-voltage transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: PMBTA42 2. F.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PMBTA93 |
Philips |
PNP high-voltage transistors | |
2 | PMBTA06 |
Philips |
NPN general purpose transistor | |
3 | PMBTA13 |
Philips |
NPN Darlington transistors | |
4 | PMBTA14 |
Philips |
NPN Darlington transistors | |
5 | PMBTA42 |
NXP |
100mA NPN high-voltage transistor | |
6 | PMBTA42DS |
NXP |
NPN/NPN high-voltage double transistors | |
7 | PMBTA44 |
NXP |
NPN transistor | |
8 | PMBTA45 |
NXP |
NPN High-voltage Low VCEsat (BISS) Transistor | |
9 | PMBTA55 |
Philips |
PNP general purpose transistors | |
10 | PMBTA56 |
Philips |
PNP general purpose transistor | |
11 | PMBTA64 |
Philips |
PNP Darlington transistor | |
12 | PMBT2222 |
nexperia |
NPN switching transistors |