N-channel symmetrical junction field-effect transistor in a SOT23 package. CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. PMBFJ210; PMBFJ211; PMBFJ212 PINNING - SOT23 PIN 1 2 3.
• High speed switching
• Interchangeability of drain and source connections
• High impedance. APPLICATIONS
• Analog switches
• Choppers, multiplexers and commutators
• Audio amplifiers. DESCRIPTION N-channel symmetrical junction field-effect transistor in a SOT23 package. CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
PMBFJ210; PMBFJ211; PMBFJ212
PINNING - SOT23 PIN 1 2 3 SYMBOL s d g drain gate DESCRIPTION sourc.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PMBFJ210 |
Philips |
N-channel field-effect transistors | |
2 | PMBFJ211 |
Philips |
N-channel field-effect transistors | |
3 | PMBFJ108 |
NXP |
N-channel FET | |
4 | PMBFJ109 |
NXP |
N-channel FET | |
5 | PMBFJ110 |
NXP |
N-channel FET | |
6 | PMBFJ111 |
NXP |
N-channel FET | |
7 | PMBFJ112 |
NXP |
N-channel FET | |
8 | PMBFJ113 |
NXP |
N-channel FET | |
9 | PMBFJ174 |
NXP |
P-channel MOSFET | |
10 | PMBFJ175 |
NXP |
P-channel MOSFET | |
11 | PMBFJ176 |
NXP |
P-channel MOSFET | |
12 | PMBFJ177 |
NXP |
P-channel MOSFET |