The PMBD6050 is a high-speed switching diode fabricated in planar technology, and encapsulated in the small SOT23 plastic SMD package. PINNING PIN 1 2 3 DESCRIPTION anode not connected cathode 1 2 n.c. 3 MAM185 1 Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF.
• Small plastic SMD package
• High switching speed: max. 4 ns
• Continuous reverse voltage: max. 70 V
• Repetitive peak reverse voltage: max. 85 V
• Repetitive peak forward current: max. 500 mA. APPLICATIONS
• High-speed switching in thick and thin-film circuits.
3
Marking code: p5A = made in Hong Kong; t5A = made in Malaysia.
handbook, halfpage 2
PMBD6050
DESCRIPTION The PMBD6050 is a high-speed switching diode fabricated in planar technology, and encapsulated in the small SOT23 plastic SMD package. PINNING PIN 1 2 3 DESCRIPTION anode not connected cathode
1 2 n.c. 3
MAM185
1
Fig.1 Simpli.
anode not connected cathode APPLICATIONS • High-speed switching in thick and thin-film circuits. DESCRIPTION The PMBD6.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PMBD6100 |
Philips |
High-speed double diode | |
2 | PMBD2835 |
Philips |
High-speed double diodes | |
3 | PMBD2836 |
Philips |
High-speed double diodes | |
4 | PMBD2837 |
Philips |
High-speed double diodes | |
5 | PMBD2838 |
Philips |
High-speed double diodes | |
6 | PMBD353 |
Philips |
Schottky barrier double diode | |
7 | PMBD353 |
NXP |
Schottky barrier double diode | |
8 | PMBD354 |
NXP |
Schottky barrier double diode | |
9 | PMBD7000 |
nexperia |
Double high-speed switching diode | |
10 | PMBD7000 |
Philips |
High-speed double diode | |
11 | PMBD7100 |
NXP |
High-speed double diode | |
12 | PMBD914 |
Philips |
High-speed diode |