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PM505BA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -20V 40mΩ @VGS = -4.5V ID -4A SOT-23(S) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±8 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM -4 -3 -21 Power Dissip.
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | PM50502C |
HITACHI |
Silicon N-Channel MOS Type FET |
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| 2 | PM503BA |
UNIKC |
P-Channel MOSFET |
|
| 3 | PM506BA |
UNIKC |
N-Channel MOSFET |
|
| 4 | PM509BA |
UNIKC |
P-Channel MOSFET |
|
| 5 | PM50B4LA060 |
Mitsubishi |
INTELLIGENT POWER MODULES |
|
| 6 | PM50CBS060 |
Powerex Power Semiconductors |
Intelligent Power Module |
|
| 7 | PM50CL1A060 |
Mitsubishi |
INTELLIGENT POWER MODULES |
|
| 8 | PM50CL1B060 |
Mitsubishi |
INTELLIGENT POWER MODULES |
|
| 9 | PM50CLA060 |
Mitsubishi Electric Semiconductor |
Intelligent Power Module |
|
| 10 | PM50CLA060 |
Powerex |
Three Phase IGBT Inverter |
|
| 11 | PM50CLB060 |
Mitsubishi Electric |
Intelligent Power Module |
|
| 12 | PM50CLB120 |
Mitsubishi Electric |
Intelligent Power Module |
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