PM25RLB120 - Mitsubishi Electric Semiconductor

PM25RLB120 Intelligent Power Module

MITSUBISHI PM25RLB120 FLAT-BASE TYPE INSULATED PACKAGE PM25RLB120 FEATURE a) Adopting new 5th generation IGBT (CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.9V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of CSTBT chip, and error output is possible .

Features

φ 2.5 3.25 4 4 17.5 25.75 50.75 17.5 1 5 9 13 19 25 2.5 71.5 B U V W 55 5 N P Terminal code 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. VUPC UFO UP VUP1 VVPC VFO VP VVP1 VWPC WFO 11. 12. 13. 14. 15. 16. 17. 18. 19. WP VWP1 VNC VN1 Br UN VN WN Fo 2 -φ 7.5 4 4 5.5 4 4 2.5 19.5 22 7.75 23 4 4 23 4 4 23 4 4 98.25 1.5 1 2-φ2.5 1 0.5 2 10.5 27.5 17 16 8.5 Oct. 2003 MITSUBISHI PM25RLB120 FLAT-BASE TYPE INSULATED PACKAGE INTERNAL FUNCTIONS BLOCK DIAGRAM Br Fo VNC WN VN1 VN UN WP VWP1 VWPC WFO VP VVPC VVP1 VFO UP VUPC VUP1 UFO Gnd In Fo Vcc Gn.