PL2301GD - PULAN TECHNOLOGY

PL2301GD P-Channel High Density Trench MOSFET

PL2301GD PULAN TECHNOLOGY CO., LIMITED P-Channel High Density Trench MOSFET PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max -20V -2.2 125 @ VGS= 4.5V -1.4 170 @ VGS= 2.5V FEATURES ●Super high dense cell trench design for low RDS(on). ●Rugged and reliable. ●Surface Mount package. SOT-23-3 D D S G G S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwis.

Features

●Super high dense cell trench design for low RDS(on).
●Rugged and reliable.
●Surface Mount package. SOT-23-3 D D S G G S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ± 8 V Drain Current-Continuousa@ TA= 25 °C b -Pulse Drain-Source Diode Forward Current a Maximum Power Dissipationa TA=25°C TA=75°C Operating Junction and Storage Temperature Range ID IDM IS PD TJ,TSTG -2.2 -6 -0.75 1.25 0.75 - 55 to 150 A A A W °C THERMAL CHARACTERISTICS a Thermal Resistance,Junction-to-Ambi.