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PHT4NQ10LT - NXP

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PHT4NQ10LT N-channel enhancement mode field-effect transistor

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHT4NQ10LT in SOT223. 2. Features s s s s s TrenchMOS™ technology Fast switching Low on-state resistance Surface mount package Logic level compatible. 3. Applications c c s Primary side switch in DC to DC convertors s High speed drive.

Features

s s s s s TrenchMOS™ technology Fast switching Low on-state resistance Surface mount package Logic level compatible. 3. Applications c c s Primary side switch in DC to DC convertors s High speed driver s Fast general purpose switch. 4. Pinning information Table 1: Pin 1 2 3 4 Pinning - SOT223, simplified outline and symbol Description gate (g) 4 Simplified outline Symbol drain (d) source (s) drain (d) 1 Top view d g 2 3 MSB002 - 1 MBB076 s SOT223 1. TrenchMOS is a trademark of Royal Philips Electronics Philips Semiconductors PHT4NQ10LT N-channel enhancement mode field-effect transi.

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