N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance. Intended for use in Compact Fluorescent Lights (CFL) and general purpose switching applications. QUICK REFERENCE DATA SYMBOL VDS.
rce-drain diode current (DC) Source-drain diode current (pulse peak value) Total power dissipation Storage temperature Junction temperature CONDITIONS RGS = 20 kΩ Tsp = 25 ˚C Tsp = 100 ˚C Tsp = 25 ˚C Tsp = 25 ˚C Tsp = 25 ˚C Tsp = 25 ˚C MIN. -55 MAX. 520 520 30 0.6 0.5 2.4 0.6 2.4 1.8 150 150 UNIT V V V A A A A A W ˚C ˚C AVALANCHE LIMITING VALUE SYMBOL PARAMETER WDSS CONDITIONS MIN. MAX. UNIT Drain-source non-repetitive ID = 1 A ; VDD ≤ 50 V ; VGS = 10 V ; unclamped inductive turn-off RGS = 50 Ω energy Tj = 25˚C prior to surge Tj = 100˚C prior to surge Drain-source repetitive ID = 1 A ; VDD ≤ .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PHT1N60R |
NXP |
PowerMOS transistor | |
2 | PHT11N06LT |
NXP |
TrenchMOS transistor Logic level FET | |
3 | PHT11N06T |
NXP |
TrenchMOS transistor Standard level FET | |
4 | PHT1206 |
Vishay |
Thin Film Wraparound Chip Resistors | |
5 | PHT |
Vishay |
Thin Film Wraparound Chip Resistors | |
6 | PHT-10x-xx-L-x |
Samtec |
PRESS FIT .025 SQ POST HEADER | |
7 | PHT-11x-xx-L-x |
Samtec |
PRESS FIT .025 SQ POST HEADER | |
8 | PHT-12x-xx-L-x |
Samtec |
PRESS FIT .025 SQ POST HEADER | |
9 | PHT-13x-xx-L-x |
Samtec |
PRESS FIT .025 SQ POST HEADER | |
10 | PHT-14x-xx-L-x |
Samtec |
PRESS FIT .025 SQ POST HEADER | |
11 | PHT-150-xx-L-x |
Samtec |
PRESS FIT .025 SQ POST HEADER | |
12 | PHT-1901 |
Micro Electronics |
LOW PROFILE INTERFACE COUPLING AND HYBRID TRANSFORMERS |