N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters and general purpose switching applications. PHP69N03T QUICK REFERENCE DATA SYMBOL .
very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters and general purpose switching applications. PHP69N03T QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 10 V MAX. 30 69 125 175 14 UNIT V A W ˚C mΩ PINNING - TO220AB PIN 1 2 3 tab gate drain source drain DESCRIPTION PIN CONFIGURATION tab SYMBOL d g s 1 23 LIMITING VALUES Limiting values in accordance with the Absolute Ma.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PHP69N03LT |
NXP |
N-channel TrenchMOS transistor Logic level FET | |
2 | PHP60 |
Semtech Corporation |
7/500 & 15/000 Watt TVS Module | |
3 | PHP60N06LT |
NXP |
TrenchMOS transistor Logic level FET | |
4 | PHP60N06T |
NXP |
TrenchMOS transistor Standard level FET | |
5 | PHP63NQ03LT |
NXP |
logic level FET | |
6 | PHP65N06LT |
NXP |
TrenchMOS transistor Logic level FET | |
7 | PHP65N06T |
NXP |
TrenchMOS transistor Standard level FET | |
8 | PHP66NQ03LT |
NXP |
N-channel TrenchMOS transistor | |
9 | PHP6N10E |
NXP |
PowerMOS transistor | |
10 | PHP6N50E |
NXP |
PowerMOS transistors Avalanche energy rated | |
11 | PHP6N60E |
NXP |
PowerMOS transistors Avalanche energy rated | |
12 | PHP6NA60E |
NXP |
PowerMOS transistors Low capacitance Avalanche energy rated |