PH4030AL - NXP

PH4030AL N-Channel MOSFET

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing and consumer applications. 1.2 Features and benefits „ High efficiency due to low switching and conduction losses „ Suitable for logic level gate drive sources 1.3 Applications „ .

Features

„ High efficiency due to low switching and conduction losses „ Suitable for logic level gate drive sources 1.3 Applications „ Consumer applications „ Desktop Voltage Regulator Module (VRM) „ Notebook Voltage Regulator Module (VRM) 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 30 V ID drain current Tmb = 25 °C; VGS = 10 V; [1] - - 100 A see Figure 1 Ptot total power dissipation Tmb = 25 °C; see Figure 2 - - 69 W Dynamic characteristics QGD QG(tot) gate-drain charge total g.