PESD5V0S1BA - NXP

PESD5V0S1BA Low capacitance bidirectional ESD protection diodes

Top view 1 2 PESD5V0S1BA QUICK REFERENCE DATA SYMBOL VRWM Cd PARAMETER reverse standoff voltage diode capacitance; f = 1 MHz; VR = 0 V VALUE 5 35 UNIT V pF number of protected lines 1 PINNING PIN 1 2 anode 1 anode 2 DESCRIPTION 1 2 001aaa138 Low capacitance ESD protection diode in a very small SOD323 plastic package, designed to protect one data line f.

Features

• Bi-directional ESD protection of one line
• Low diode capacitance
• Max. peak pulse power: Ppp = 130 W at tP = 8/20 µs
• Low clamping voltage: V(CL)R = 14 V at Ipp = 12 A
• Ultra low leakage current: IRM = 5 nA at VRWM = 5 V
• ESD protection 30 kV
• IEC 61000-4-2; level 4 (ESD)
• IEC-61000-4-5 (surge); Ipp = 12 A at tP = 8/20 µs. APPLICATIONS
• Cellular handsets and accessories
• Portable electronics
• Computers and peripherals
• Communication systems
• Audio and video equipment. DESCRIPTION Top view 1 2 PESD5V0S1BA QUICK REFERENCE DATA SYMBOL VRWM Cd PARAMETER reverse standoff voltage diod.