PESD12VS2UQ - NXP

PESD12VS2UQ (PESDxS2UQ) Double Esd Protection Diode

Uni-directional double ESD protection diodes in a SOT663 plastic package. Designed to protect up to two transmission or data lines from ElectroStatic Discharge (ESD) damage. MARKING TYPE NUMBER PESD3V3S2UQ PESD5V0S2UQ PESD12VS2UQ PESD15VS2UQ PESD24VS2UQ Note 1. * = p : made in Hong Kong. * = t : made in Malaysia. * = W : made in China. MARKING CODE(1) *E1 *E.

Features

• Uni-directional ESD protection of up to two lines
• Max. peak pulse power: Ppp = 150 W at tp = 8/20 µs
• Low clamping voltage: V(CL)R = 20 V at Ipp = 15 A
• Low reverse leakage current: IRM < 1 nA
• ESD protection > 30 kV
• IEC 61000-4-2; level 4 (ESD)
• IEC 61000-4-5 (surge); Ipp = 15 A at tp = 8/20 µs. APPLICATIONS
• Computers and peripherals
• Communication systems
• Audio and video equipment
• High speed data lines
• Parallel ports. DESCRIPTION Uni-directional double ESD protection diodes in a SOT663 plastic package. Designed to protect up to two transmission or data lines from ElectroSt.