NIKO-SEM N-Channel Enhancement Mode PEE28BB Field Effect Transistor PDFN 3x3P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 1.8mΩ ID 124A Features • Pb−Free, Halogen Free and RoHS compliant. • Low RDS(on) to Minimize Conduction Losses. • Ohmic Region Good RDS(on) Ratio. • Optimized Gate Charge to Minimize Switching Losses. Applica.
• Pb−Free, Halogen Free and RoHS compliant.
• Low RDS(on) to Minimize Conduction Losses.
• Ohmic Region Good RDS(on) Ratio.
• Optimized Gate Charge to Minimize Switching Losses.
Applications
• Protection Circuits Applications.
• Logic/Load Switch Circuits Applications.
D
G S
D D DD #1 S S S G
G. GATE D. DRAIN S. SOURCE
100% UIS Tested 100% Rg Tested
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
Continuous Drain Current
TA = .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PEEL153 |
AMI Semiconductor |
CMOS Programmable Electrically Erasable Logic Device | |
2 | PEEL16V8-15 |
ICT |
CMOS Programmable Electrically Erasable Logic | |
3 | PEEL16V8-25 |
ICT |
CMOS Programmable Electrically Erasable Logic | |
4 | PEEL16V8J-15 |
ICT |
CMOS Programmable Electrically Erasable Logic | |
5 | PEEL16V8J-25 |
ICT |
CMOS Programmable Electrically Erasable Logic | |
6 | PEEL16V8J-25L |
ICT |
CMOS Programmable Electrically Erasable Logic | |
7 | PEEL16V8P-15 |
ICT |
CMOS Programmable Electrically Erasable Logic | |
8 | PEEL16V8P-25 |
ICT |
CMOS Programmable Electrically Erasable Logic | |
9 | PEEL16V8P-25L |
ICT |
CMOS Programmable Electrically Erasable Logic | |
10 | PEEL16V8S-25 |
ICT |
CMOS Programmable Electrically Erasable Logic | |
11 | PEEL16V8S-25L |
ICT |
CMOS Programmable Electrically Erasable Logic | |
12 | PEEL16V8T-25 |
ICT |
CMOS Programmable Electrically Erasable Logic |