PE9926 - semi one

PE9926 N-Channel Enhancement Mode Power MOSFET

The PE9926 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES ● VDS =20V,ID =6A RDS(ON) < 28mΩ @ VGS=4.5V RDS(ON) < 38mΩ @ VGS=2.5V Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and curren.

Features

● VDS =20V,ID =6A RDS(ON) < 28mΩ @ VGS=4.5V RDS(ON) < 38mΩ @ VGS=2.5V Schematic diagram
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current Application
● Power switching application
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply Marking and pin Assignment SOP-8 top view Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Maximum Power Dissipat.