These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching.
200V,60A, RDS(ON) =24mΩ@VGS = 10V
Improved dv/dt capability
Fast switching
100% EAS Guaranteed
Green Device Available
Applications
Networking
Load Switch
LED applications
Quick Charger
Absolute Maximum Ratings Tc=25℃ unless otherwise noted
Symbol VDS VGS
ID
IDM EAS IAS
PD
TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current
– Continuous (TC=25℃) (Chip Limitation) Drain Current
– Continuous (TC=100℃) (Chip Limitatio.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PDP50T4 |
LG |
HD PDP MODULE | |
2 | PDP-428XG |
Pioneer |
(PDP-428XG / PDP-508XG) PLASMA TELEVISION | |
3 | PDP-433PE |
Pioneer |
Service manual | |
4 | PDP-433PU |
Pioneer |
Service manual | |
5 | PDP-501MX |
Pioneer |
PLASMA DISPLAY Service Manual | |
6 | PDP-508XG |
Pioneer |
(PDP-428XG / PDP-508XG) PLASMA TELEVISION | |
7 | PDP-V402 |
Pioneer |
Display Tech Manual | |
8 | PDP-V402 |
Pioneer |
Display | |
9 | PDP-V402E |
Pioneer |
Display Tech Manual | |
10 | PDP-V402E |
Pioneer |
Display | |
11 | PDP01N65 |
Potens semiconductor |
N-Channel MOSFETs | |
12 | PDP02N65 |
Potens semiconductor |
N-Channel MOSFETs |