PDN001N60S - Potens semiconductor

PDN001N60S N-Channel MOSFETs

These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode .

Features

 Improved dv/dt capability
 Fast switching
 Green Device Available ID 0.1A SOT23-3S Pin Configuration D S G G D S Applications
 High efficient switched mode power supplies
 TV Power
 Adapter/charger
 LED Lighting Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current
  – Continuous (TC=25℃) Drain Current
  – Continuous (TC=100℃) Drain Current
  – Pulsed1 Power Dissipation (TC=25℃) Power Dissipati.