PDM1102H - Nihon Inter Electronics

PDM1102H MOSFET

MOSFET 110A 250V PDM1102H 108.0 P2HM1102H PDM1102H P2HM1102H 108.0 Approximate Weight :220g Maximum Ratings Rating Symbol Drain-Source Voltage VDSS VGS=0V Gate-Source Voltage Continuous Drain Current Duty=50% D.C. VGSS ID Pulsed Drain Current IDM Total Power Dissipation PD Operating Junction Temperature Range Tjw Storage Temperature Rang.

Features

5 10 20 50 100 DRAIN TO SOURCE VOLTAGE VDS (V) GATE TO SOURCE VOLTAGE VGS (V) 16 5 SWITCHING TIME t ( s) 2 12 1 8 0.5 4 0 0 100 200 300 400 500 600 TOTAL GATE CHRAGE Qg (nC) 0.2 0.1 0.05 2 5 10 20 50 100 200 SERIES GATE IMPEDANCE RG ( ) SWITCHING TIME t (ns) 1000 500 200 100 50 20 10 2 1000 500 SWITCHING TIME t (ns) 200 100 50 5 10 20 50 DRAIN CURRENT ID (A) 100 200 20 10 2 500 200 100 50 20 10 5 2 1 0.5 0.5 2 5 10 20 50 100 200 DRAIN TO SOURCE VOLTAGE VDS (V) 500 REVERSE RECOVERY TIME trr (ns) REVERSE CURRENT IR (A) 200 100 50 20 10 5 5 10 20 50 DRAIN CU.