These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching.
100V,6.5A, RDS(ON) =95mΩ@VGS = 10V
Improved dv/dt capability
Fast switching
100% EAS Guaranteed
Green Device Available
Applications
Networking
Load Switch
LED applications
Absolute Maximum Ratings Tc=25℃ unless otherwise noted
Symbol VDS VGS
ID
IDM
PD
TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current
– Continuous (TC=25℃) Drain Current
– Continuous (TC=100℃) Drain Current
– Pulsed1 Power Dissipation (TC=25℃) .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PDL0910 |
Potens semiconductor |
N-Channel MOSFETs | |
2 | PDL0954 |
Potens semiconductor |
N-Channel MOSFETs | |
3 | PDL0956 |
Potens semiconductor |
N-Channel MOSFETs | |
4 | PDL01N50 |
Potens semiconductor |
N-Channel MOSFETs | |
5 | PDL01N60 |
Potens semiconductor |
N-Channel MOSFETs | |
6 | PDL03N20 |
Potens semiconductor |
N-Channel MOSFETs | |
7 | PDL10N20 |
Potens semiconductor |
N-Channel MOSFETs | |
8 | PDL3911 |
Potens semiconductor |
P-Channel MOSFETs | |
9 | PDL6909 |
Potens semiconductor |
P-Channel MOSFETs | |
10 | PDL6910 |
Potens semiconductor |
N-Channel MOSFETs | |
11 | PDL6912 |
Potens semiconductor |
N-Channel MOSFETs | |
12 | PDLF2000L |
Coilcraft |
SMT Data Line EMI Filters |