These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode .
Improved dv/dt capability
Fast switching
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ID 9A
TO220F Pin Configuration
D
G GDS
S
Applications
High efficient switched mode power supplies
TV Power
Adapter/charger
Server Power
PV Inverter / UPS
Absolute Maximum Ratings Tc=25℃ unless otherwise noted
Symbol VDS VGS
ID
IDM EAS IAS
PD
TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current
– Continuous (TC=25℃) Drain Current
– Continuous (TC=100℃) Drain Current
– Pulsed.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PDF09N60 |
Potens semiconductor |
N-Channel MOSFETs | |
2 | PDF09N50 |
Potens semiconductor |
N-Channel MOSFETs | |
3 | PDF0903 |
Potens semiconductor |
P-Channel MOSFETs | |
4 | PDF0904 |
Potens semiconductor |
N-Channel MOSFETs | |
5 | PDF0956 |
Potens semiconductor |
N-Channel MOSFETs | |
6 | PDF0974 |
Potens semiconductor |
N-Channel MOSFETs | |
7 | PDF0976 |
Potens semiconductor |
N-Channel MOSFETs | |
8 | PDF0980 |
Potens semiconductor |
N-Channel MOSFETs | |
9 | PDF01N65 |
Potens semiconductor |
N-Channel MOSFETs | |
10 | PDF02N65 |
Potens semiconductor |
N-Channel MOSFETs | |
11 | PDF03N60 |
Potens semiconductor |
N-Channel MOSFETs | |
12 | PDF03N65 |
Potens semiconductor |
N-Channel MOSFETs |