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PD516BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 7.5mΩ @VGS = 10V ID 55A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID IDM.
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | PD510BA |
UNIKC |
N-Channel MOSFET |
|
| 2 | PD515BA |
UNIKC |
P-Channel MOSFET |
|
| 3 | PD517BA |
UNIKC |
P-Channel MOSFET |
|
| 4 | PD5036 |
PowerDsine |
Telephone Ring Generator Controller |
|
| 5 | PD504BA |
UNIKC |
N-Channel MOSFET |
|
| 6 | PD506BA |
UNIKC |
N-Channel MOSFET |
|
| 7 | PD50F2 |
Nihon Inter Electronics |
FRD |
|
| 8 | PD50F4 |
Nihon Inter Electronics |
FRD |
|
| 9 | PD50F5 |
ETC |
FRD MODULE |
|
| 10 | PD50F6 |
ETC |
FRD MODULE |
|
| 11 | PD50F6 |
ETC |
FRD MODULE |
|
| 12 | PD533BA |
UNIKC |
P-Channel MOSFET |
|