at any time, without notice. This document contains information on products in the design phase of development. The information here is subject to change without notice. Do not finalize a design with this information. StrataFlash® Embedded Memory (P30) Contact your local Intel sales office or your distributor to obtain the latest specifications and before p.
■ High performance
■ Security — 85/88 ns initial access — One-Time Programmable Registers:
• 64 unique factory device identifier bits — 40 MHz with zero wait states, 20 ns clock-to
• 64 user-programmable OTP bits data output synchronous-burst read mode
• Additional 2048 user-programmable OTP bits — 25 ns asynchronous-page read mode — Selectable OTP Space in Main Array: — 4-, 8-, 16-, and continuous-word burst mode
• 4x32KB parameter blocks + 3x128KB main — Buffered Enhanced Factory Programming blocks (top or bottom configuration) (BEFP) at 5 µs/byte (Typ) — Absolute write protection: VPP = VSS .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PC28F640P30BF65 |
Numonyx |
64-Mbit Single Bit per Cell P30-65nm Flash Memory | |
2 | PC28F640P30TF65 |
Numonyx |
64-Mbit Single Bit per Cell P30-65nm Flash Memory | |
3 | PC28F640P33BF60 |
Numonyx |
128-Mbit Single Bit per Cell Single Bit per Cell | |
4 | PC28F640P33TF60 |
Numonyx |
128-Mbit Single Bit per Cell Single Bit per Cell | |
5 | PC28F640 |
Numonyx |
Embedded Flash Memory | |
6 | PC28F640J3C |
Intel |
StrataFlash Memory | |
7 | PC28F640J3F75 |
Numonyx |
64-Mbit Single Bit per Cell Embedded Flash Memory | |
8 | PC28F00AG18FE |
Micron |
StrataFlash Embedded Memory | |
9 | PC28F00AG18FF |
Micron |
StrataFlash Embedded Memory | |
10 | PC28F00AG18xx |
Micron |
StrataFlash Embedded Memory | |
11 | PC28F00AM29EW |
MICRON |
Parallel NOR Flash Embedded Memory | |
12 | PC28F00AP30BFA |
MICRON |
Micron Parallel NOR Flash Embedded Memory |