PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • High collector current gain (hFE) at high IC • Higher efficiency leading to less heat genereation .
• Low collector-emitter saturation voltage VCEsat
• High collector current capability: IC and ICM
• High collector current gain (hFE) at high IC
• Higher efficiency leading to less heat genereation
• High temperature applications up to 175 °C
• AEC-Q101 qualified
3. Applications
• Power management
• DC-to-DC conversion
• Supply line switches
• Battery charger switches
• Peripheral drivers
• Driver in low supply voltage applications (e.g. lamps and LEDs)
• Inductive load driver
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VCEO
collector-emitter voltage
IC colle.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PBSS5350T |
NXP |
50 V/ 3 A PNP low VCEsat (BISS) transistor | |
2 | PBSS5350T |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor | |
3 | PBSS5350D |
NXP |
PNP transistor | |
4 | PBSS5350D |
nexperia |
PNP transistor | |
5 | PBSS5350S |
NXP |
50 V low VCEsat PNP transistor | |
6 | PBSS5350SS |
NXP |
PNP/PNP low VCEsat (BISS) transistor | |
7 | PBSS5350SS |
nexperia |
PNP/PNP transistor | |
8 | PBSS5350X |
NXP |
PNP Transistor | |
9 | PBSS5350X |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor | |
10 | PBSS5350Z |
nexperia |
3A PNP low VCEsat transistor | |
11 | PBSS5350Z-Q |
nexperia |
3A PNP low VCEsat transistor | |
12 | PBSS5320D |
NXP |
PNP transistor |