PBSS4440D - NXP

PBSS4440D NPN transistor

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) SMD plastic package. PNP complement: PBSS5440D. 1.2 Features „ Ultra low collector-emitter saturation voltage VCEsat „ 4 A continuous collector current capability IC (DC) „ Up to 15 A peak current „ Very low collector-emitter saturation resistance „ High efficiency due to less.

Features

„ Ultra low collector-emitter saturation voltage VCEsat „ 4 A continuous collector current capability IC (DC) „ Up to 15 A peak current „ Very low collector-emitter saturation resistance „ High efficiency due to less heat generation 1.3 Applications „ Power management functions „ Charging circuits „ DC-to-DC conversion „ MOSFET gate driving „ Power switches (e.g. motors, fans) „ Thin Film Transistor (TFT) backlight inverter 1.4 Quick reference data Table 1. Symbol VCEO IC ICM RCEsat Quick reference data Parameter Conditions Min collector-emitter voltage open base - collector current .