PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS306NX. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due.
Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications High-voltage DC-to-DC conversion High-voltage MOSFET gate driving High-voltage motor control High-voltage power switches (e.g. motors, fans) Thin Film Transistor (TFT) backlight inverter Automotive applications 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditi.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PBSS306PZ |
NXP |
PNP Transistor | |
2 | PBSS306PZ |
nexperia |
PNP transistor | |
3 | PBSS306NX |
NXP |
4.5A NPN transistor | |
4 | PBSS306NZ |
nexperia |
5.1A NPN transistor | |
5 | PBSS301ND |
NXP |
4A NPN transistor | |
6 | PBSS301NX |
nexperia |
5.3A NPN transistor | |
7 | PBSS301NZ |
nexperia |
5.8A NPN transistor | |
8 | PBSS301PD |
NXP |
PNP Transistor | |
9 | PBSS301PX |
nexperia |
PNP Transistor | |
10 | PBSS301PZ |
nexperia |
PNP Transistor | |
11 | PBSS302ND |
NXP |
40V NPN transistor | |
12 | PBSS302NX |
nexperia |
5.3A NPN transistor |