800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistors (RET) family in small plastic packages. Table 1. Product overview Type number Package Nexperia PBRN123YK SOT346 PBRN123YS[1] SOT54 PBRN123YT SOT23 JEITA SC-59A SC-43A - [1] Also available in SOT54A and SOT54 variant packages (see Section 2). JEDEC TO-236 TO-9.
I 800 mA output current capability I High current gain hFE I Built-in bias resistors I Simplifies circuit design I Low collector-emitter saturation voltage VCEsat I Reduces component count I Reduces pick and place costs I ±10 % resistor ratio tolerance 1.3 Applications I Digital application in automotive and industrial segments I Medium current peripheral driver I Switching loads 1.4 Quick reference data Table 2. Symbol VCEO IO Quick reference data Parameter Conditions collector-emitter voltage open base output current PBRN123YK, PBRN123YT PBRN123YS Min Typ Max Unit - - 40 V [1] -.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PBRN123Y |
nexperia |
NPN transistor | |
2 | PBRN123YS |
nexperia |
NPN transistor | |
3 | PBRN123YT |
nexperia |
NPN transistor | |
4 | PBRN123E |
nexperia |
NPN RET | |
5 | PBRN123E |
NXP Semiconductors |
NPN 800 mA 40 V BISS RETs | |
6 | PBRN123EK |
nexperia |
NPN RET | |
7 | PBRN123ES |
nexperia |
NPN RET | |
8 | PBRN123ET |
nexperia |
NPN RET | |
9 | PBRN113E |
nexperia |
NPN RET | |
10 | PBRN113E |
NXP Semiconductors |
NPN 800 mA 40 V BISS RETs | |
11 | PBRN113EK |
nexperia |
NPN RET | |
12 | PBRN113ES |
nexperia |
NPN RET |