PBHV3160Z - nexperia

PBHV3160Z PNP Transistor

PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High voltage • Low collector-emitter saturation voltage VCEsat • High collector current capability IC • High collector current gain hFE at high IC • AEC-Q101 qualified 3. Applic.

Features

• High voltage
• Low collector-emitter saturation voltage VCEsat
• High collector current capability IC
• High collector current gain hFE at high IC
• AEC-Q101 qualified 3. Applications
• Electronic ballast for fluorescent lighting
• LED driver for LED chain module
• LCD backlighting
• HID front lighting
• Automotive motor management
• Hook switch for wired telecom
• Switch Mode Power Supply (SMPS) 4. Quick reference data Table 1. Symbol VCEO IC hFE Quick reference data Parameter collector-emitter voltage collector current DC current gain Conditions open base VCE = -10 V; IC = -10 mA; Tam.