PA610DTF - UNIKC

PA610DTF P-Channel MOSFET

PA610DTF P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -100V 200mΩ @VGS = -10V ID -10A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -100 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 10.

Features

MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250mA -100 Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250mA -2.0 -3.2 -4.0 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 Zero Gate Voltage Drain Current IDSS VDS = -80V, VGS = 0V VDS = -80V, VGS = 0V , TJ = 125 °C -1 -10 Drain-Source On-State Resistance1 RDS(ON) VGS = -10V, ID = -10A 187 200 Forward Transconductance1 gfs VDS = -15V, ID = -10A 25 DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge2 Gate-Source Charge2 Gate-Drain Charge2 Turn-On Dela.