P5003QVG - UNIKC

P5003QVG N&P-Channel MOSFET

P5003QVG N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 27.5mΩ @VGS = 10V -30V 45mΩ @VGS = -10V ID Channel 10A N -7A P SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS Drain-Source Voltage N 30 VDS P -30 Gate-Source Voltage N ±20 VGS P ±20 .

Features

YMBOL TEST CONDITIONS LIMITS UNITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS Gate Threshold Voltage VGS(th) Gate-Body Leakage IGSS VGS = 0V, ID = 250µA VGS = 0V, ID = -250µA VDS = VGS, ID = 250µA VDS = VGS, ID = -250µA VDS = 0V, VGS = ±20V VDS = 0V, VGS = ±20V VDS = 24V, VGS = 0V N 30 P -30 V N 1 1.5 2.5 P -1 -1.5 -2.5 N ±100 nA P ±100 N 1 Zero Gate Voltage Drain Current IDSS VDS = -24V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 55 °C P N VDS = -20V, VGS = 0V, TJ = 55 °C P On-State Drain Current1 ID(ON) VDS = 5V, VGS = 10V VDS = -5V, VGS = -10V N P VGS.