P40NF03L - ST Microelectronics

P40NF03L N-CHANNEL Power MOSFET

This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SPE.

Features

Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature o Value 30 30 ± 20 40 28 160 70 0.46 250 -65 to 175 175 ( 1) starting Tj = 25 oC, ID =20A , VDD = 15V Unit V V V A A A W W /o C m/J o o C C (
•) Pulse width limited by safe operating area October 1999 1/8 STP40NF03L THERMAL DATA R thj -case R thj -amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature F or Soldering Purpose 2.1 62.5 300 o o C/W C/W o C ELECTRICAL CHARACTERISTIC.