P2060ZT - UNIKC

P2060ZT N-Channel MOSFET

P2060ZT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 600V 190mΩ @VGS = 10V 20A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1 Avalanche Current3 Aval.

Features

Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA VDS = 0V, VGS = ±30V 600 V 2 3.1 4 ±100 nA Gate Voltage Drain Current Drain-Source On-State Resistance1 Forward Transconductance1 IDSS RDS(ON) gfs VDS = 600V, VGS = 0V , TC = 25 °C VDS = 480V, VGS = 0V , TC = 100 °C VGS = 10V, ID = 10A VDS = 10V, ID = 10A 1 mA 100 160 190 mΩ 15 S DYNAMIC Input Capacitance Ciss 1728 Output Capacitance Coss VGS = 0V, VDS = 25V, f = 1M.