P1810ATX - UNIKC

P1810ATX N-Channel MOSFET

P1810ATX N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 18mΩ @VGS = 10V 63A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TC = 25 °C ID 63 TC = 100 °C 40 IDM 180 Avalanc.

Features

own Voltage V(BR)DSS VGS = 0V, ID = 250mA 100 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250mA 2 3 4 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 Zero Gate Voltage Drain Current IDSS VDS = 100V, VGS = 0V VDS = 80V, VGS = 0V , TJ = 125 °C 1 25 On-State Drain Current1 ID(ON) VDS = 10V, VGS = 10V 180 Drain-Source On-State FRoerswisatradncTera1 nsconductance1 RDS(ON) gfs VGS = 10V, ID = 32A VDS = 50V, ID = 32A 16 18 85 DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge2 Gate-Source Charge2 Gate-Drain Charge2 Turn-On Delay T.