P13009 - Jingdao

P13009 Bipolar Junction Transistor

R www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. P13009 Bipolar Junction Transistor ◆Si NPN ◆RoHS COMPLIANT 1．APPLICATION Fluorescent Lamp、Electronic Ballast、 Computer Switch Power Supply 2．FEATURES High voltage capability Features of good high temperature High switching speed 3．PACKAGE 1 2 3 TO-3PB 4．Electrical Characteristics 4.1 Absolute Max.

Features

High voltage capability Features of good high temperature High switching speed 3．PACKAGE 1 2 3 TO-3PB 4．Electrical Characteristics 4.1 Absolute Maximum Ratings 1 Base(B) 2 Collector(C) 3 Emitter(E) Tamb= 25℃ unless specified PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emittor Voltage Emittor- Base Voltage Collector Current Power Dissipation Ta=25℃ Tc=25℃ Junction Temperature Storage Temperature 4.2 Electrical Parameter Tamb= 25℃ unless specified PARAMETER SYMBOL Collector-Base Voltage Collector-Emittor Voltage Emittor-Base Voltage Collector-Base Cutoff Curr.